发明名称 |
Structure and method for replacement gate MOSFET with self-aligned contact using sacrificial mandrel dielectric |
摘要 |
The present disclosure provides a method for forming a semiconductor device that includes forming a replacement gate structure overlying a channel region of a substrate. A mandrel dielectric layer is formed overlying source and drain regions of the substrate. The replacement gate structure is removed to provide an opening exposing the channel region of the substrate. A functional gate structure is formed over the channel region including a work function metal layer. A protective cap structure is formed over the functional gate structure. At least one via is etched through the mandrel dielectric layer selective to the protective cap structure to expose a portion of at least one of the source region and the drain region. A conductive fill is then formed in the vias to provide a contact to the at least one of the source region and the drain region.
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申请公布号 |
US8373239(B2) |
申请公布日期 |
2013.02.12 |
申请号 |
US20100795962 |
申请日期 |
2010.06.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;SIDDIQUI SHAHAB;CHUDZIK MICHAEL P.;RADENS CARL J. |
发明人 |
SIDDIQUI SHAHAB;CHUDZIK MICHAEL P.;RADENS CARL J. |
分类号 |
H01L21/70 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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