发明名称 |
Nanocluster charge storage device |
摘要 |
An integrated circuit and method of forming an integrated circuit having a memory portion minimizes an amount of oxidation of nanocluster storage elements in the memory portion. A first region of the integrated circuit has non-memory devices, each having a control electrode or gate formed of a single conductive layer of material. A second region of the integrated circuit has a plurality of memory cells, each having a control electrode of at least two conductive layers of material that are positioned one overlying another. The at least two conductive layers are at substantially a same electrical potential when operational and form a single gate electrode. In one form each memory cell gate has two polysilicon layers overlying a nanocluster storage layer.
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申请公布号 |
US8373221(B2) |
申请公布日期 |
2013.02.12 |
申请号 |
US20070964309 |
申请日期 |
2007.12.26 |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;STEIMLE ROBERT F.;MURALIDHAR RAMACHANDRAN;WHITE BRUCE E. |
发明人 |
STEIMLE ROBERT F.;MURALIDHAR RAMACHANDRAN;WHITE BRUCE E. |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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地址 |
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