发明名称 |
Vertical nitride based semiconductor light emitting device having improved light extraction efficiency |
摘要 |
The invention provides a nitride semiconductor light emitting device. In the invention, a first conductivity-type nitride semiconductor layer is formed on a conductive substrate having light transmissibility. An active layer is formed on the first conductivity-type nitride semiconductor layer. Also, a second conductivity-type nitride semiconductor layer is formed on the active layer. Further, a conductive light scattering layer made of a conductive material is formed on an underside of the substrate. The conductive light scattering layer has light transmissibility of 70% or more and has a rough pattern formed on an outer surface to scatter light.
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申请公布号 |
US8373184(B2) |
申请公布日期 |
2013.02.12 |
申请号 |
US20060430982 |
申请日期 |
2006.05.10 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD.;SUH HYO WON;HONG JIN YOUNG |
发明人 |
SUH HYO WON;HONG JIN YOUNG |
分类号 |
H01L29/06;H01L33/22;H01L33/32;H01L33/38;H01L33/42;H01L33/62 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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