发明名称 Electrical isolation of X-ray semiconductor imager pixels
摘要 To mitigate the influence of charge sharing occurring in semiconductor detectors, an improved semiconductor detector (200) is provided, which comprises: a plurality of anodes (210) arranged to form at least one opening (230), each opening being formed by two anodes in the plurality of anodes; at least one cathode (220); a detector cell (240) located between the plurality of anodes and the at least one cathode; wherein the detector cell comprises at least one groove (250), each of the at least one groove having a first opening (252) aligned with one of the at least one opening being formed by two anodes in the plurality of anodes, each of the at least one groove extending towards the at least one cathode. By forming grooves in the detector cell, the charge cloud generated by a single photon can be received by a corresponding anode instead of several neighboring anodes, which thereby improves the spectral resolution and count rate of a semiconductor detector.
申请公布号 US8373134(B2) 申请公布日期 2013.02.12
申请号 US20080809079 申请日期 2008.12.26
申请人 KONINKLIJKE PHILIPS ELECTRONICS N.V.;ROESSL EWALD;PROKSA ROLAND 发明人 ROESSL EWALD;PROKSA ROLAND
分类号 H01L27/146 主分类号 H01L27/146
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