| 摘要 |
A MOSFET representing a semiconductor device capable of achieving decrease in the number of steps in a manufacturing process and improvement in integration by including an electrode that can be in contact with any of a p-type SiC region and an n-type SiC region with contact resistance being sufficiently suppressed includes an n+ SiC substrate, an n− SiC layer formed on the n+ SiC substrate, and a source electrode arranged in contact with the n− SiC layer. The n− SiC layer includes an n+ source region having an n conductivity type. The source electrode includes a source contact electrode arranged in contact with the n+ source region and containing Ti, Al and Si.
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