Preventing fast read before write in static random access memory arrays

摘要

A mechanism is provided for enabling a proper write through during a write-through operation. Responsive to determining the memory access as a write-through operation, first circuitry determines whether a data input signal is in a first state or a second state. Responsive to the data input signal being in the second state, the first circuitry outputs a global write line signal in the first state. Responsive to the global write line signal being in the first state, second circuitry outputs a column select signal in the second state. Responsive to the column select signal being in the second state, third circuitry keeps a downstream read path of the cache access memory at the first state such that data output by the cache memory array is in the first state.