| 发明名称 |
Programming phase change memories using ovonic threshold switches |
| 摘要 |
A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state.
|
| 申请公布号 |
US8374022(B2) |
申请公布日期 |
2013.02.12 |
| 申请号 |
US20090642915 |
申请日期 |
2009.12.21 |
| 申请人 |
INTEL CORPORATION;LANGTRY TIMOTHY C.;DODGE RICHARD;CASTRO HERNAN;KAU DERCHANG;TANG STEPHEN;HIRST JEREMY |
发明人 |
LANGTRY TIMOTHY C.;DODGE RICHARD;CASTRO HERNAN;KAU DERCHANG;TANG STEPHEN;HIRST JEREMY |
| 分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
