发明名称 Method of manufacturing semiconductor device
摘要 A method of manufacturing a semiconductor device, includes the steps of: (a) providing a support including a plane having a first region for mounting a chip thereon and a second region provided around the first region; (b) forming an insulating resin layer in a semi-curing state on the plane; (c) forming, on the insulating resin layer, a first opening portion for exposing the first region; (d) fitting a chip in the first opening portion to mount the chip on the first region; and (e) completely curing the insulating resin layer after the step (d).
申请公布号 US8372691(B2) 申请公布日期 2013.02.12
申请号 US20100691818 申请日期 2010.01.22
申请人 SHINKO ELECTRIC INDUSTRIES, CO., LTD.;SHIRAISHI AKINORI 发明人 SHIRAISHI AKINORI
分类号 H01L21/48 主分类号 H01L21/48
代理机构 代理人
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