发明名称 |
Nitride semiconductor light emitting device and method of manufacturing the same |
摘要 |
A nitride semiconductor light emitting device includes a light emitting structure having n-type and p-type nitride semiconductor layers and an active layer formed therebetween. N-type and p-type electrodes are electrically connected to the n-type and p-type nitride semiconductors, respectively. An n-type ohmic contact layer is formed between the n-type nitride semiconductor layer and the n-type electrode and has a first layer of a material In and a second layer formed on the first layer and of a material containing W. The nitride semiconductor light emitting device has thermal stability and excellent electrical characteristics without heat treatment.
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申请公布号 |
US8372672(B2) |
申请公布日期 |
2013.02.12 |
申请号 |
US20080209644 |
申请日期 |
2008.09.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;KIM HYUN SOO;KWAK JOON SEOP;KANG KI MAN;LEE JIN HYUN;KIM YU SEUNG;SONE CHEOL SOO |
发明人 |
KIM HYUN SOO;KWAK JOON SEOP;KANG KI MAN;LEE JIN HYUN;KIM YU SEUNG;SONE CHEOL SOO |
分类号 |
H01L21/00;H01L33/14;H01L33/32 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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地址 |
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