发明名称 |
Plasma oxidation processing method, plasma processing apparatus and storage medium |
摘要 |
A silicon oxide film is formed in a processing chamber of a plasma processing apparatus by performing oxidation process, by using plasma to a processing object having a patterned irregularity, wherein the plasma is generated while high-frequency power is supplied to a mount table under the conditions that the oxygen content in a process gas is not less than 0.5% and less than 10% and the process pressure is 1.3 to 665 Pa.
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申请公布号 |
US8372761(B2) |
申请公布日期 |
2013.02.12 |
申请号 |
US20080594078 |
申请日期 |
2008.03.28 |
申请人 |
TOKYO ELECTRON LIMITED;KABE YOSHIRO;KOBAYASHI TAKASHI;SHIOZAWA TOSHIHIKO;KITAGAWA JUNICHI |
发明人 |
KABE YOSHIRO;KOBAYASHI TAKASHI;SHIOZAWA TOSHIHIKO;KITAGAWA JUNICHI |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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