Methods for forming thin films comprising tellurium

摘要

Methods for controllably forming Sb—Te, Ge—Te, and Ge—Sb—Te thin films are provided. ALD processes can be used to deposit a first film comprising ZnTe. Providing an antimony source chemical, such as SbI3 replaces the zinc, thereby forming Sb2Te3 thin films. Ge—Te and Ge—Sb—Te films can also be made by providing Ge sources to ZnTe and Sb—Te thin films, respectively.