发明名称 Semiconductor light emitting device
摘要 According to one embodiment, a semiconductor light emitting device includes a plurality of semiconductor layers, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer, and is mounted in a bent state on a curved surface. The plurality of semiconductor layers includes a first main surface, a second main surface opposite to the first main surface, and a light emitting layer, the plurality of semiconductor layers being separated from one another. A material is provided between the plurality of the semiconductor layers separated from one another. The member has a higher flexibility than the semiconductor layers being.
申请公布号 US8373192(B2) 申请公布日期 2013.02.12
申请号 US20100883745 申请日期 2010.09.16
申请人 KABUSHIKI KAISHA TOSHIBA;SUGIZAKI YOSHIAKI;SHIBATA HIDEKI;KOJIMA AKIHIRO;ISHIKAWA MASAYUKI;TAMURA HIDEO;KOMATSU TETSURO 发明人 SUGIZAKI YOSHIAKI;SHIBATA HIDEKI;KOJIMA AKIHIRO;ISHIKAWA MASAYUKI;TAMURA HIDEO;KOMATSU TETSURO
分类号 H01L33/00 主分类号 H01L33/00
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