发明名称 Light emitting diode
摘要 A LED chip including a substrate, a semiconductor device layer, a current blocking layer, a current spread layer, a first electrode and a second electrode is provided. The semiconductor device layer is disposed on the substrate. The current blocking layer is disposed on a part of the semiconductor device layer and includes a current blocking segment and a current distribution adjusting segment. The current spread layer is disposed on a part of the semiconductor device layer and covers the current blocking layer. The first electrode is disposed on the current spread layer, wherein a part of the current blocking segment is overlapped with the first electrode. Contours of the current blocking segment and the first electrode are similar figures. Contour of the first electrode and is within contour of the current blocking segment. The current distribution adjusting segment is not overlapped with the first electrode.
申请公布号 US8373179(B2) 申请公布日期 2013.02.12
申请号 US201113159430 申请日期 2011.06.14
申请人 LEXTAR ELECTRONICS CORP.;FANG KUO-LUNG;WENG CHIEN-SEN;CHAO CHIH-WEI 发明人 FANG KUO-LUNG;WENG CHIEN-SEN;CHAO CHIH-WEI
分类号 H01L33/00 主分类号 H01L33/00
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