| 摘要 |
PURPOSE: A polysilicon resistor, a reference voltage circuit, and a method for manufacturing the polysilicon resistor are provided to supply a resistor with an improved temperature property by serially connecting a P- poly resistor to a P+ poly resistor. CONSTITUTION: A P- poly resistor(2) and a P+ poly resistor(3) are formed on a substrate(10). The P- poly resistor and the P+ poly resistor are serially connected through a metal electrode(12). The P- poly resistor includes gate poly silicon(20) and two contacts(40,41). The gate poly silicon includes a first doping region and a second doping region. The P+ poly resistor includes gate poly silicon(21) and two contacts(42,43). |
