发明名称 |
Method for fabrication of a semiconductor device and structure |
摘要 |
Systems and methods are disclosed for fabricating a semiconductor device, includes implanting one or more regions on a semiconductor wafer; performing a layer transfer onto a carrier; and transferring from said carrier to a target wafer.
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申请公布号 |
US8373230(B1) |
申请公布日期 |
2013.02.12 |
申请号 |
US20100904114 |
申请日期 |
2010.10.13 |
申请人 |
MONOLITHIC 3D INC.;OR-BACH ZVI;CRONQUIST BRIAN;BEINGLASS ISREAL;DE JONG JAN LODEWIJK;SEKAR DEEPAK C. |
发明人 |
OR-BACH ZVI;CRONQUIST BRIAN;BEINGLASS ISREAL;DE JONG JAN LODEWIJK;SEKAR DEEPAK C. |
分类号 |
H01L27/12 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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