发明名称 Semiconductor device and method for fabricating the same
摘要 A semiconductor device includes a fuse pattern formed as conductive polymer layer having a low melting point. The fuse pattern is easily cut at low temperature to improve repair efficiency. The semiconductor device includes first and second fuse connecting patterns that are separated from each other by a distance, a fuse pattern including a conductive polymer layer formed between the first and second fuse connection patterns and connecting the first and second fuse connection patterns, and a fuse box structure that exposes the fuse pattern. The conductive polymer layer includes a nano-sized metal powder and a polymer.
申请公布号 US8373201(B2) 申请公布日期 2013.02.12
申请号 US201113075063 申请日期 2011.03.29
申请人 HYNIX SEMICONDUCTOR INC.;PARK HYUNG JIN 发明人 PARK HYUNG JIN
分类号 H01L23/52 主分类号 H01L23/52
代理机构 代理人
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