发明名称 Photodetectors
摘要 Implementations of quantum well photodetectors are provided. In one embodiment, a quantum structure includes a first barrier layer, a well layer located on the first barrier layer, and a second barrier layer located on the well layer. A metal layer is located adjacent to the quantum structure.
申请公布号 US8373153(B2) 申请公布日期 2013.02.12
申请号 US20090472168 申请日期 2009.05.26
申请人 UNIVERSITY OF SEOUL INDUSTRY COOPERATION FOUNDATION;AHN DOYEOL 发明人 AHN DOYEOL
分类号 H01L29/66;H01L21/36 主分类号 H01L29/66
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