发明名称 |
Memory device with improved performance |
摘要 |
The present resistive memory device includes first and second electrodes. An active layer is situated between the first and second electrodes. The active layer with advantage has a thermal conductivity of 0.02 W/Kcm or less, and is surrounded by a body in contact with the layer, the body having a thermal conductivity of 0.01 W/Kcm or less.
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申请公布号 |
US8373148(B2) |
申请公布日期 |
2013.02.12 |
申请号 |
US20070796073 |
申请日期 |
2007.04.26 |
申请人 |
SPANSION LLC;LAN ZHIDA;RATHOR MANUJ;BERNARD JOFFRE F. |
发明人 |
LAN ZHIDA;RATHOR MANUJ;BERNARD JOFFRE F. |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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