发明名称 |
Semiconductor light emitting device having patterned substrate and manufacturing method of the same |
摘要 |
There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.
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申请公布号 |
US8372669(B2) |
申请公布日期 |
2013.02.12 |
申请号 |
US201113176712 |
申请日期 |
2011.07.05 |
申请人 |
SAMSUNG ELECTRONICS., LTD.;KIM SUN WOON;KIM HYUN KYUNG;BACK HYUNG KY;HAN JAE HO |
发明人 |
KIM SUN WOON;KIM HYUN KYUNG;BACK HYUNG KY;HAN JAE HO |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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