发明名称 Semiconductor light emitting device having patterned substrate and manufacturing method of the same
摘要 There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.
申请公布号 US8372669(B2) 申请公布日期 2013.02.12
申请号 US201113176712 申请日期 2011.07.05
申请人 SAMSUNG ELECTRONICS., LTD.;KIM SUN WOON;KIM HYUN KYUNG;BACK HYUNG KY;HAN JAE HO 发明人 KIM SUN WOON;KIM HYUN KYUNG;BACK HYUNG KY;HAN JAE HO
分类号 H01L21/00 主分类号 H01L21/00
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