HIGH VOLTAGE OPERATING FIELD EFFECT TRANSISTOR, AND BIAS CIRCUIT THEREFOR AND HIGH VOLTAGE CIRCUIT THEREOF

摘要

A high voltage operating field effect transistor has a substrate, a semiconductor channel formation region disposed in a surface of the substrate, a source region and a drain region which are spaced apart from each other with the semiconductor channel formation region disposed between the source region and the drain region, a gate insulating film region disposed on the semiconductor channel formation region, a resistive gate region disposed on the gate insulating film region, a source side electrode disposed on a source region end portion side of the resistive gate region, and a drain side electrode disposed on a drain region end portion side of the resistive gate region. A signal electric potential is supplied to the source side electrode, and a bias electric potential an absolute value of which is equal to or larger than that of a specified electric potential and which changes according to an increase or decrease in a drain electric potential is supplied to the drain side electrode.