| 摘要 |
FIELD: electricity.SUBSTANCE: in a semiconductor metamorphic nanoheterostructure, comprising a single-crystal semi-insulating substrate GaAs, a superlattice AlGaAs/GaAs, a metamorphic buffer InAlAs with linear increase of InAs content x in thickness (x=x?x, where x~0, x?0.75), an inverse layer InAlAs with smooth or uneven reduction of InAs content x in thickness (x=x?x, where x?-x=0.05÷0.1, x?0.7), a curing layer with homogeneous composition InAlAs, an active area InAl As/InGaAs with high InAs content, agreed along the lattice perimeter with the curing layer, inside the metamorphic buffer there are two mechanically stressed superlattices InAlAs/InGaAs and InAlAs/InGaAs introduced, symmetrically mismatched at ?x=0.05÷0.10 relative to the current composition of the metamorphic buffer in these points, which divide the metamorphic buffer into three parts, in every of which the content of InAs x in thickness increases accordingly from xto x, from xto xand from xto x, where 0.4<x<0.6, and 0.6<x<0.75.EFFECT: reduced density of dislocations penetrating an active area of a nanoheterostructure.3 dwg |
