| 摘要 |
FIELD: electricity.SUBSTANCE: in a power thyristor arranged on the basis of a silicon plate of n-type of electroconductivity, comprising at both sides of the plate the diffusion p-layers, forming high-voltage p-n-transitions with local reduction of occurrence depth of the p-n-transition in the centre of the plate at least at its one side, local diffusion n+-layers arranged at the same side of the plate, forming the main emitter of the thyristor and several circular auxiliary emitters, a resistor built into the p-layer, arranged between auxiliary emitters, metallised ohmic contacts arranged on the surface of the main emitter (cathode), on the reverse side of the plate (anode), on the surface of auxiliary emitters with a transition over their outer border to the surface of the p-layer, between the resistor built into the p-layer and the auxiliary emitter arranged outside from it there is a circular metallised ohmic contact to the p-layer (a control electrode) with width from 0.5 mm to 1.5 mm.EFFECT: integration of a function of self-protection against overvoltage pulses into standard current-controlled thyristors.1 dwg |
