发明名称 FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM
摘要 A field effect transistor includes a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode for obtaining a current in response to the gate voltage; an active layer provided adjacent to the source electrode and the drain electrode and formed of an oxide semiconductor including magnesium and indium as major components; and a gate insulating layer provided between the gate electrode and the active layer.
申请公布号 KR101232014(B1) 申请公布日期 2013.02.08
申请号 KR20117003492 申请日期 2009.08.13
申请人 发明人
分类号 G02F1/1368;G09F9/30;H01L29/786 主分类号 G02F1/1368
代理机构 代理人
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