发明名称 |
FIELD EFFECT TRANSISTOR, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM |
摘要 |
A field effect transistor includes a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode for obtaining a current in response to the gate voltage; an active layer provided adjacent to the source electrode and the drain electrode and formed of an oxide semiconductor including magnesium and indium as major components; and a gate insulating layer provided between the gate electrode and the active layer. |
申请公布号 |
KR101232014(B1) |
申请公布日期 |
2013.02.08 |
申请号 |
KR20117003492 |
申请日期 |
2009.08.13 |
申请人 |
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发明人 |
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分类号 |
G02F1/1368;G09F9/30;H01L29/786 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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