| 摘要 |
A light emitting diode and a fabrication method thereof are provided to increase an aperture ratio of the light emitting diode during light emission driving, by forming a subsidiary electrode to connect a drain of a thin film transistor part and a cathode electrode. An emission part(506) is located on a substrate(502), and is formed between two electrodes. A thin film transistor part(A) is formed on the top of the emission part. A pixel electrode is connected to a drain of the thin film transistor part and one of two electrodes electrically. One of two electrodes is an anode electrode(504) formed on the substrate, and the other is a cathode electrode(508) formed on the bottom of the thin film transistor part. The anode electrode is an electrode of a transparent conductive composite material, and the cathode electrode is an electrode of an opaque conductive material. |
