发明名称 |
METHOD FOR PROVIDING HIGH ETCH RATE |
摘要 |
A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber. |
申请公布号 |
WO2012170302(A3) |
申请公布日期 |
2013.02.07 |
申请号 |
WO2012US40523 |
申请日期 |
2012.06.01 |
申请人 |
LAM RESEARCH CORPORATION;XU, QING;RUSU, CAMELIA;WINNICZEK, JAROSLAW W.;LIN, FRANK Y.;MILLER, ALAN J. |
发明人 |
XU, QING;RUSU, CAMELIA;WINNICZEK, JAROSLAW W.;LIN, FRANK Y.;MILLER, ALAN J. |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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