发明名称 AMORPHOUS SILICON FILM FORMATION METHOD AND AMORPHOUS SILICON FILM FORMATION APPARATUS
摘要 <p>PURPOSE: A apparatus for forming an amorphous silicon film a method thereof are provided to minutely form a contact hole and a line by improving the accuracy of surface roughness. CONSTITUTION: A base(2) of a silicon substrate(1) is heated. A seed layer(3) is formed on the surface of the base by flowing aminosilane group gas to the base. Silane gas without amino group is supplied to a seed layer on the surface of the base. The silane gas without the amino group is thermally decomposed. An amorphous silicon film(4) is formed on the seed layer.</p>
申请公布号 KR20130014458(A) 申请公布日期 2013.02.07
申请号 KR20120145412 申请日期 2012.12.13
申请人 TOKYO ELECTRON LIMITED 发明人 HASEBE KAZUHIDE;MURAKAMI HIROKI;KAKIMOTO AKINOBU
分类号 H01L21/312;H01L21/205 主分类号 H01L21/312
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