发明名称 |
AMORPHOUS SILICON FILM FORMATION METHOD AND AMORPHOUS SILICON FILM FORMATION APPARATUS |
摘要 |
<p>PURPOSE: A apparatus for forming an amorphous silicon film a method thereof are provided to minutely form a contact hole and a line by improving the accuracy of surface roughness. CONSTITUTION: A base(2) of a silicon substrate(1) is heated. A seed layer(3) is formed on the surface of the base by flowing aminosilane group gas to the base. Silane gas without amino group is supplied to a seed layer on the surface of the base. The silane gas without the amino group is thermally decomposed. An amorphous silicon film(4) is formed on the seed layer.</p> |
申请公布号 |
KR20130014458(A) |
申请公布日期 |
2013.02.07 |
申请号 |
KR20120145412 |
申请日期 |
2012.12.13 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
HASEBE KAZUHIDE;MURAKAMI HIROKI;KAKIMOTO AKINOBU |
分类号 |
H01L21/312;H01L21/205 |
主分类号 |
H01L21/312 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|