发明名称 FILM FORMATION METHOD AND FILM FORMATION APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a technique for forming an excellent film on the substrate surface, by transferring a polysilazane film formed on a carrier. <P>SOLUTION: A sheet film F carrying a thin film R coated, on the surface thereof, with a coating liquid containing a polysilazane material is placed in a processing chamber 1, which is then evacuated. While heating the sheet film F to a predetermined temperature by means of a heater 541, a hardening acceleration gas containing oxygen is introduced into the processing chamber 1 thus increasing the viscosity of the thin film R. Thereafter, gas supply is stopped and the processing chamber 1 is evacuated again thus removing the hardening acceleration gas and inhibiting progress of hardening. Under this state, the thin film R on the sheet film F and a substrate W are brought into tight contact and pressurized thus transferring the thin film R to the substrate W. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013030614(A) 申请公布日期 2013.02.07
申请号 JP20110165598 申请日期 2011.07.28
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 SHIBAFUJI YAYOI;KAWAGOE MICHIFUMI
分类号 H01L21/312;H01L21/31 主分类号 H01L21/312
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