| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a memory device capable of changing a defective memory cell into a redundant memory cell with less information. <P>SOLUTION: The memory device comprises a plurality of memory cell blocks (501 to 503) including a plurality of memory cells, a redundant memory cell, and a selector for changing a defective memory cell among the plurality of memory cells into a redundant memory cell, and a control circuit (522) for outputting a control signal of the selector of the plurality of memory cell blocks on the basis of defective information on whether each of the plurality of memory cell blocks has a defective memory cell, and specific information for specifying a defective memory cell in a memory cell block having the defective memory cell. The control circuit has a plurality of flip-flops (FF0 to FF8) provided in association with each bit line of the control signal of the selector of the plurality of memory cell blocks to shift the specific information in series. <P>COPYRIGHT: (C)2013,JPO&INPIT |
