THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING SAME

摘要

The purpose of this thin film transistor is to provide a thin film transistor that can establish both superior ON characteristics and superior OFF characteristics and in which the electrical characteristics are symmetrical for interchanging the source electrode and drain electrode. The thin film transistor is provided with: a substrate (100); a gate electrode (110); a gate insulating layer (120); a crystalline silicon layer (131) formed on the gate insulating layer (120) and above the gate electrode (110); a noncrystalline silicon layer (130) formed on the gate insulating layer (120) and on both sides of the crystalline silicon layer (131); a channel protective layer (140) formed on the crystalline silicon layer (131); and a source electrode (171) and drain electrode (172). The thicknesses of the crystalline silicon layer (131) film and the noncrystalline silicon layer (130) film are the same.