MASKING METHOD FOR DEEP ETCHING BASED ON BUFFER LAYER

摘要

Provided is a masking method for deep etching based on a buffer layer, which method comprises forming a functional material layer on a substrate; forming a buffer layer on the functional material layer; coating a layer of photoresist material on the buffer layer; exposing the photoresist material in a planar manner to form a pre-set micro-structural pattern on the photoresist material; transferring the micro-structural pattern to the buffer layer; etching the micro-structural pattern on the buffer layer deeply into the functional material layer; and removing the photoresist material and the buffer layer so as to obtain a functional material layer with the micro-structural pattern.