METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent the deterioration of a film and the change of compositions in a first oxide semiconductor region by forming a second oxide semiconductor region which functions as a protection layer between the first oxide semiconductor region and a protection insulation layer of a thin film transistor. CONSTITUTION: A gate electrode layer(101) is formed on a substrate(100). A gate insulation layer(102) is formed on the gate electrode layer. A source electrode layer(105a) or a drain electrode layer(105b) is formed on the gate insulation layer. A first oxide semiconductor region(103) is formed on the gate insulation layer, the source electrode layer or the drain electrode layer. A second oxide semiconductor region(104) is formed on the first oxide semiconductor region.