ORGANIC TRANSISTOR AND METHOD FOR MANUFACTURING SAME

摘要

An organic transistor is provided with: an insulating substrate; a pair of insulating pedestals (2, 3) which are arranged spaced apart from each other on the substrate, each pedestal forming a table-like flat surface; a source electrode (4) arranged on the table-like flat surface formed by one of the pedestals; a drain electrode (5) arranged on the table-like flat surface formed by the other pedestal; a gate electrode (6) arranged on the substrate between the pair of pedestals; and an organic semiconductor layer (7) arranged so as to make contact with the upper surfaces of the source electrode and the drain electrode. The gate electrode and a lower surface of the organic semiconductor layer vertically face each other across a gap region (8), and the side surfaces of the pedestals facing the gap region have shapes in which the lower side edges are receded toward the sides away from the gate electrode compared to the upper side edges. A contact resistance between the source and drain electrodes and the organic semiconductor layer is reduced, high-speed response performance is enhanced by shortening the channel, and short-circuits between the source and drain electrodes and the gate electrode accompanying shortening of the channel can be avoided.