SILICON CARBIDE EPITAXIAL WAFER AND PROCESS FOR PRODUCTION THEREOF, SILICON CARBIDE BULK SUBSTRATE FOR EPITAXIAL GROWTH PURPOSES AND PROCESS FOR PRODUCTION THEREOF, AND HEAT TREATMENT APPARATUS,申请号KR20127029309-传众专利搜索

发明名称	SILICON CARBIDE EPITAXIAL WAFER AND PROCESS FOR PRODUCTION THEREOF, SILICON CARBIDE BULK SUBSTRATE FOR EPITAXIAL GROWTH PURPOSES AND PROCESS FOR PRODUCTION THEREOF, AND HEAT TREATMENT APPARATUS
摘要
申请公布号	KR20130014566(A)	申请公布日期	2013.02.07
申请号	KR20127029309	申请日期	2011.03.18
申请人	MITSUBISHI ELECTRIC CORPORATION	发明人	TOMITA NOBUYUKI;HAMANO KENICHI;TARUTANI MASAYOSHI;MITANI YOICHIRO;KUROIWA TAKEHARU;IMAIZUMI MASAYUKI;SUMITANI HIROAKI;OHTSUKA KENICHI;FURUSHO TOMOAKI;SAWADA TAKAO;ABE YUJI
分类号	H01L21/205;C23C16/42	主分类号	H01L21/205
代理机构		代理人
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