| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist material for forming a resist film that has higher resolution than conventional positive resist materials, causes low edge roughness, achieves a favorable pattern profile after exposure, and exhibits high etching durability, in particular, a positive resist material using a polymer composition suitable as base resin for a chemically amplified positive resist material, and a pattern forming method. <P>SOLUTION: The positive resist material includes a resin as a base resin, in which a hydrogen atom of a carboxyl group is substituted with an acid-labile group expressed by general formula (1). In the formula, A represents -(CR<SP POS="POST">2</SP><SB POS="POST">2</SB>)<SB POS="POST">m</SB>-; B represents -(CR<SP POS="POST">5</SP><SB POS="POST">2</SB>)<SB POS="POST">n</SB>-; R<SP POS="POST">2</SP>and R<SP POS="POST">5</SP>each represents a hydrogen atom or an alkyl group and the two of R<SP POS="POST">2</SP>or two of R<SP POS="POST">5</SP>may be coupled with each other to form a ring; m and n represent 1 or 2; R<SP POS="POST">6</SP>represents an alkyl group, alkoxy group, alkanoyl group, alkoxycarbonyl group, hydroxy group, nitro group, aryl group, halogen atom or cyano group; R<SP POS="POST">3</SP>represents an alkyl group, alkenyl group, alkynyl group or aryl group, optionally having an oxygen atom or a sulfur atom; and p represents an integer of 0 to 4. The positive resist material shows significantly high contrast in an alkali dissolution rate before and after exposure, has high resolution, gives a favorable pattern profile and favorable edge roughness after exposure, and moreover suppresses an acid diffusion rate and exhibits high etching durability. <P>COPYRIGHT: (C)2013,JPO&INPIT |
