发明名称 PLASMA PROCESSING EQUIPMENT
摘要 <P>PROBLEM TO BE SOLVED: To provide plasma processing equipment having reduced secular change in plasma processing performance by stabilizing a temperature of a sample table cover and a gas amount generated from the sample table cover. <P>SOLUTION: Plasma processing equipment comprises a sample table 207 disposed in a lower part in a vacuum vessel so as to face plasma, and having an upper face on which a sample W to be processed using the plasma is to be placed. The sample table 207 has: a recess portion arranged on an outer peripheral side of the face on which the sample W is to be placed, so as to have a level difference between itself and the face, and in which a dielectric ring-shaped member 301 is arranged; and means 315 arranged below the ring-shaped member 301, for heating the ring-shaped member 301. The sample table 207 includes: metal members 303 and 304 arranged on an outer peripheral side of the ring-shaped member 301 and above the member 301, and connected to the sample table 207, for positioning the ring-shaped member 301 by pressing the member 301 downward; and means 308 for supplying a heat transference gas to a gap between an upper face of the recess portion and a lower face of the ring-shaped member 301. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013030532(A) 申请公布日期 2013.02.07
申请号 JP20110164031 申请日期 2011.07.27
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人
分类号 H01L21/3065 主分类号 H01L21/3065
代理机构 代理人
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