| 摘要 |
<P>PROBLEM TO BE SOLVED: To achieve a solid state image pickup device, having improved sensitivity by having a capability of efficiently reflecting light, incident from the other face which is the opposite side of one face on which a photoelectric conversion element is formed on a semiconductor substrate, with a reflection film formed on the one face. <P>SOLUTION: The solid state image pickup device 100a comprises: photoelectric conversion elements PD1 and PD2, formed in a semiconductor substrate 100 of a first conductivity type, which generate a signal charge by means of photoelectric conversion of incident light; and transfer transistors Tt1 and Tt2, formed on a first principal plane of the semiconductor substrate 100, which transfer the signal charge generated by the photoelectric conversion elements PD1 and PD2. A gate electrode 107 of the transfer transistor is so formed as to cover a surface of a first principal plane of a charge storage region 102 which constitutes the photoelectric conversion element. The transfer gate electrode 107 is constituted of a reflection film 107b composed of a polysilicon layer 107a and a high-melting point metal silicide layer which covers a surface of the polysilicon layer 107a. <P>COPYRIGHT: (C)2013,JPO&INPIT |
