发明名称 |
INTEGRATED GATE CONTROLLED HIGH VOLTAGE DIVIDER |
摘要 |
An integrated circuit containing a gate controlled voltage divider having an upper resistor on field oxide in series with a transistor switch in series with a lower resistor. A resistor drift layer is disposed under the upper resistor, and the transistor switch includes a switch drift layer adjacent to the resistor drift layer, separated by a region which prevents breakdown between the drift layers. The switch drift layer provides an extended drain or collector for the transistor switch. A sense terminal of the voltage divider is coupled to a source or emitter node of the transistor and to the lower resistor. An input terminal is coupled to the upper resistor and the resistor drift layer. A process of forming the integrated circuit containing the gate controlled voltage divider.
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申请公布号 |
US2013032863(A1) |
申请公布日期 |
2013.02.07 |
申请号 |
US201213567340 |
申请日期 |
2012.08.06 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED;KAWAHARA HIDEAKI;DENISON MARIE;PENDHARKAR SAMEER;HOWER PHILIP L.;LIN JOHN;NEIDORFF ROBERT A. |
发明人 |
KAWAHARA HIDEAKI;DENISON MARIE;PENDHARKAR SAMEER;HOWER PHILIP L.;LIN JOHN;NEIDORFF ROBERT A. |
分类号 |
H01L27/07;H01L21/20 |
主分类号 |
H01L27/07 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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