发明名称 ION BEAM INCIDENT ANGLE DETECTION ASSEMBLY AND METHOD
摘要 In an ion implanter, a detector assembly is employed to monitor the ion beam current and incidence angle at the location of the work piece or wafer. The detector assembly includes a plurality of pairs of current sensors and a blocker panel. The blocker panel is coupled to the detector array to move together with the detector array. The blocker panel is also disposed a distance away from the sensors to allow certain of the beamlets that comprise the ion beam to reach the sensors. Each sensor in a pair of sensors measures the beam current incident thereon and the incident angle is calculated using these measurements. In this manner, beam current and incidence angle variations may be measured at the work piece site and be accommodated for, thereby avoiding undesirable beam current profiles.
申请公布号 US2013035897(A1) 申请公布日期 2013.02.07
申请号 US201213648775 申请日期 2012.10.10
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC;VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC 发明人 PANDOLFI THOMAS A.
分类号 G01B21/22;G01T1/16;G06F15/00 主分类号 G01B21/22
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