发明名称 |
BUFFER LAYER AND METHOD OF FORMING BUFFER LAYER |
摘要 |
Buffer layer and method of forming the buffer layer, the method including forming a high-k dielectric layer, forming a titanium nitride layer over the high-k dielectric layer, forming a silicon layer on the titanium nitride layer, annealing the silicon layer into the titanium nitride layer to form an annealed silicon layer and forming an n-metal over the high-k dielectric layer.
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申请公布号 |
US2013032900(A1) |
申请公布日期 |
2013.02.07 |
申请号 |
US201113195554 |
申请日期 |
2011.08.01 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;HOU CHENG-HAO;LEE WEI-YANG;YU XIONG-FEI;HSU KUANG-YUAN |
发明人 |
HOU CHENG-HAO;LEE WEI-YANG;YU XIONG-FEI;HSU KUANG-YUAN |
分类号 |
H01L21/288;H01L29/78 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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