发明名称 BUFFER LAYER AND METHOD OF FORMING BUFFER LAYER
摘要 Buffer layer and method of forming the buffer layer, the method including forming a high-k dielectric layer, forming a titanium nitride layer over the high-k dielectric layer, forming a silicon layer on the titanium nitride layer, annealing the silicon layer into the titanium nitride layer to form an annealed silicon layer and forming an n-metal over the high-k dielectric layer.
申请公布号 US2013032900(A1) 申请公布日期 2013.02.07
申请号 US201113195554 申请日期 2011.08.01
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;HOU CHENG-HAO;LEE WEI-YANG;YU XIONG-FEI;HSU KUANG-YUAN 发明人 HOU CHENG-HAO;LEE WEI-YANG;YU XIONG-FEI;HSU KUANG-YUAN
分类号 H01L21/288;H01L29/78 主分类号 H01L21/288
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