METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND PROGRAM

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device for forming an SiC based film such as SiC at a low temperature by using silicon based gas and amine based gas, and to provide a substrate processing method, a substrate processing apparatus, and a program.

SOLUTION: A method of manufacturing a semiconductor device includes the steps of: housing a substrate 200 in a process chamber 201; and forming a film containing silicon and carbon on the substrate 200 by supplying silicon based gas and amine based gas into the heated process chamber 201. The step of forming the film containing silicon and carbon includes the steps of: sealing the silicon based gas and the amine based gas within the process chamber 201 by supplying the silicon based gas and amine based gas into the process chamber 201; keeping a state in which the silicon based gas and the amine based gas are sealed within the process chamber 201; and evacuating the process chamber 201.

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