| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a single crystal substrate capable of improving withstand voltage characteristics. <P>SOLUTION: This single crystal substrate comprises a single crystal of silicon carbide, and contains at least one of yttrium, zirconium, magnesium and calcium as a trace additive. Since the trace additive is contained, the withstand voltage characteristics can be improved. This semiconductor element has the single crystal substrate 1, a p-type semiconductor layer 3 comprising silicon carbide and provided on the single crystal substrate 1, a first electrode 4 provided on the single crystal substrate 1, and a second electrode 5 provided on the p-type semiconductor layer 3. <P>COPYRIGHT: (C)2013,JPO&INPIT |
