发明名称 |
CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION FOR ArF IMMERSION LITHOGRAPHY AND PATTERN FORMING PROCESS |
摘要 |
A chemically amplified positive resist composition comprising (A) a sulfonium salt of 3,3,3-trifluoro-2-hydroxy-2-trifluoromethylpropionic acid, (B) an acid generator, (C) a base resin, and (D) an organic solvent is suited for ArF immersion lithography. The carboxylic acid sulfonium salt is highly hydrophobic and little leached out in immersion water. By virtue of controlled acid diffusion, a pattern profile with high resolution can be constructed.
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申请公布号 |
US2013034813(A1) |
申请公布日期 |
2013.02.07 |
申请号 |
US201213558855 |
申请日期 |
2012.07.26 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD.;OHSAWA YOUICHI;SAGEHASHI MASAYOSHI;HASEGAWA KOJI;SASAMI TAKESHI |
发明人 |
OHSAWA YOUICHI;SAGEHASHI MASAYOSHI;HASEGAWA KOJI;SASAMI TAKESHI |
分类号 |
G03F7/027;C07C51/09;C07C381/12;G03F7/20 |
主分类号 |
G03F7/027 |
代理机构 |
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代理人 |
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主权项 |
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