FORMING SIC MOSFETS WITH HIGH CHANNEL MOBILITY BY TREATING THE OXIDE INTERFACE WITH CESIUM IONS
摘要
Methods of forming a semiconductor structure include providing an insulation layer on a semiconductor layer and diffusing cesium ions into the insulation layer from a cesium ion source outside the insulation layer. A MOSFET including an insulation layer treated with cesium ions may exhibit increased inversion layer mobility.
申请公布号
WO2013019334(A1)
申请公布日期
2013.02.07
申请号
WO2012US43699
申请日期
2012.06.22
申请人
CREE, INC.;AUBURN UNIVERSITY;DHAR, SARIT;RYU, SEI-HYUNG;AGARWAL, ANANT;WILLIAMS, JOHN ROBERT
发明人
DHAR, SARIT;RYU, SEI-HYUNG;AGARWAL, ANANT;WILLIAMS, JOHN ROBERT