| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an amorphous carbon film having high etching resistance. <P>SOLUTION: A deposition method comprises the steps of: arranging a substrate on a lower electrode by using a parallel plate plasma CVD apparatus in which an upper electrode and the lower electrode are provided in a processing container; and supplying a carbon monoxide and an inert gas in the processing container, and decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma to accumulate and deposit amorphous carbon on a substrate. It is preferred that the upper electrode is a carbon electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
