发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
摘要 <p>Provided are: a semiconductor device which is capable of reducing the processes or reducing the area of a variable resistance element as much as possible; and a method for manufacturing the semiconductor device. A semiconductor device, which comprises two or more variable resistance elements (100) inside a multilayer wiring layer on a semiconductor substrate (101), and wherein: each variable resistance element (100) has a configuration in which a variable resistance layer (111) having a variable resistance is interposed between a lower electrode (105) and an upper electrode (112); a wiring line in a predetermined wiring layer in the multilayer wiring layer also serves as the lower electrode (105); and the upper electrode (112) is formed as a line that extends in one direction and also serves as an upper electrode of another variable resistance element that is adjacent to the variable resistance element (100) in the above-mentioned one direction.</p>
申请公布号 WO2013018842(A1) 申请公布日期 2013.02.07
申请号 WO2012JP69627 申请日期 2012.08.01
申请人 NEC CORPORATION;SAKAMOTO, TOSHITSUGU;TADA, MUNEHIRO;MIYAMURA, MAKOTO 发明人 SAKAMOTO, TOSHITSUGU;TADA, MUNEHIRO;MIYAMURA, MAKOTO
分类号 H01L27/105;H01L45/00;H01L49/00 主分类号 H01L27/105
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