发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To improve yield of a semiconductor product by suppressing variation in bonding strength between a semiconductor device and a substrate. <P>SOLUTION: A method of manufacturing a semiconductor apparatus includes the steps of: providing a semiconductor device 1, a substrate 2 containing Cu as a main element at least in a surface, and a ZnAl eutectic solder chip 3' having a shape smaller than the semiconductor device, respectively; interposing the ZnAl eutectic solder chip between the substrate and the semiconductor device by arranging the semiconductor device and the substrate to face respective bonding surfaces each other; heating the ZnAl eutectic solder chip interposed between the substrate and the semiconductor device while applying a load 31, thereby forming a ZnAl solder layer 3 by melting the ZnAl eutectic solder chip; and cooling the ZnAl solder layer while applying the load thereto. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013030607(A) 申请公布日期 2013.02.07
申请号 JP20110165508 申请日期 2011.07.28
申请人 NISSAN MOTOR CO LTD;SUMITOMO METAL MINING CO LTD;SANKEN ELECTRIC CO LTD;FUJI ELECTRIC CO LTD 发明人 TANIMOTO SATOSHI;ZUSHI YUSUKE;MURAKAMI YOSHINORI;IZEKI TAKASHI;TAKAMORI MASAHITO;SATO SHINJI;MATSUI KOHEI
分类号 H01L21/52;C22C18/04 主分类号 H01L21/52
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