发明名称 METHOD FOR PRODUCING LIQUID-DISCHARGE-HEAD SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method for producing a liquid-discharge-head substrate that can form a liquid supply port from both surfaces of a silicon substrate in a short time and can accurately form an opening width of the liquid supply port. <P>SOLUTION: The method for producing a liquid-discharge-head substrate includes: a process of preparing the silicon substrate including an energy generating element for discharging liquid on a front-surface side of the silicon substrate; a process of forming a first etchant introduction hole on the front-surface side of the silicon substrate; a process of supplying a first etchant into the first etchant introduction hole formed on the front-surface side of the silicon substrate, and supplying a second etchant to a back-surface side of the silicon substrate; a process of stopping the supply of the second etchant; and a process of, after the supply of the second etchant has been stopped, forming the liquid supply port extending through front and back surfaces of the silicon substrate by the supply of the first etchant. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013028155(A) 申请公布日期 2013.02.07
申请号 JP20120112719 申请日期 2012.05.16
申请人 CANON INC 发明人 MURAKAMI RYOTARO;KOYAMA SHUJI;KISHIMOTO KEISUKE;FURUSAWA KENTA
分类号 B41J2/16 主分类号 B41J2/16
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