| 摘要 |
A manufacturing method of a semiconductor device is provided, comprising: loading a substrate into a processing chamber; forming a first film on the substrate by supplying silicon atom-containing gas, boron atom-containing gas, and germanium atom-containing gas into the processing chamber; forming a second film on the first film by supplying the silicon atom-containing gas and the boron atom-containing gas into the processing chamber; and unloading the substrate from the processing chamber. |
