| 摘要 |
PURPOSE: A method for controlling a hard mask CD by argon sputtering is provided to prevent the corrosion of a sidewall in a hard mask when a base silicon layer is etched. CONSTITUTION: A hard mask is formed on a silicon base etching layer(104). The silicon base etching layer is arranged in a plasma processing chamber(108). The silicon base etching layer is silicon-sputtered(112). The sputtered silicon is oxidized(116). The silicon base etching layer is etched(118). A substrate is removed from the plasma processing chamber(120). [Reference numerals] (104) Providing a hard mask on the upper part of an etching layer; (108) Arranging in a plasma processing chamber; (112) Sputtering silicon; (116) Oxidizing the sputtered silicon; (118) Etching a silicon base etching layer; (120) Removing from the plasma processing chamber; (AA) Start; (BB) Stop |
