| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device which improves yield of the semiconductor device by preventing generation of dust originated from a side end part of a substrate. <P>SOLUTION: A method of manufacturing a semiconductor device includes: a first step for forming a protective film to cover at least a side end part of a substrate; a second step for forming a groove in a first main surface of the substrate, which has a ring shape when viewed from a side facing the first main surface, by etching using a photoresist pattern; and a third step for forming an insulation ring by forming an insulating film to fill the groove. <P>COPYRIGHT: (C)2013,JPO&INPIT |
